Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/77751
Title: Influence of Silicon Nanostructures on the Growth of GaN on Silicon
Authors: WEE QIXUN
Keywords: GaN on silicon, nanoheteroepitaxy, MOCVD, metal-assisted chemical etching, nanostructure, nanofabrication
Issue Date: 14-Nov-2013
Citation: WEE QIXUN (2013-11-14). Influence of Silicon Nanostructures on the Growth of GaN on Silicon. ScholarBank@NUS Repository.
Abstract: GaN is an important III-V semiconductor with several device applications, such as LEDs, LDs and HEMTs. Silicon, being cost-effective, is becoming a more common substrate for GaN growth. However, intrinsic differences between the two materials create integration problems. As nanostructured substrate is known to induce better crystal quality through nanoheteroepitaxy, an investigation on how silicon nanostructures can influence the subsequently grown GaN was done using MOCVD. One-step metal-assisted chemical etching (MACE) was the chosen nanofabrication technique. In this thesis, a systematic study was done to optimize the fabrication of silicon nanostructures. Thereafter, silicon wafers were processed using the optimized conditions and then used as substrates for GaN growth. Different growth sequences were investigated to determine the most suitable process for film growth. Finally, GaN grown on nanostructured silicon and flat silicon were characterized by several techniques for comparisons.
URI: http://scholarbank.nus.edu.sg/handle/10635/77751
Appears in Collections:Ph.D Theses (Open)

Show full item record
Files in This Item:
File Description SizeFormatAccess SettingsVersion 
WeeQ.pdf3.92 MBAdobe PDF

OPEN

NoneView/Download

Page view(s)

86
checked on Oct 5, 2018

Download(s)

176
checked on Oct 5, 2018

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.