Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.progsurf.2009.06.002
Title: Surface transfer doping of semiconductors
Authors: Chen, W. 
Qi, D. 
Gao, X. 
Wee, A.T.S. 
Keywords: Charge transfer
Diamond
Epitaxial graphene
Interface
Organic thin film
Photoemission
Surface transfer doping
Synchrotron
Issue Date: Sep-2009
Citation: Chen, W., Qi, D., Gao, X., Wee, A.T.S. (2009-09). Surface transfer doping of semiconductors. Progress in Surface Science 84 (9-10) : 279-321. ScholarBank@NUS Repository. https://doi.org/10.1016/j.progsurf.2009.06.002
Abstract: Surface transfer doping relies on charge separation at interfaces, and represents a valuable tool for the controlled and nondestructive doping of nanostructured materials or organic semiconductors at the nanometer-scale. It cannot be easily achieved by the conventional implantation process with energetic ions. Surface transfer doping can effectively dope semiconductors and nanostructures at relatively low cost, thereby facilitating the development of organic and nanoelectronics. The aim of this review is to highlight recent advances of surface transfer doping of semiconductors. Special focus is given to the effective doping of diamond, epitaxial graphene thermally grown on SiC, and organic semiconductors. The doping mechanism of various semiconductors and their possible applications in nanoelectronic devices will be discussed, including the interfacial charge transfer and the energy level alignment mechanisms. © 2009 Elsevier Ltd. All rights reserved.
Source Title: Progress in Surface Science
URI: http://scholarbank.nus.edu.sg/handle/10635/77659
ISSN: 00796816
DOI: 10.1016/j.progsurf.2009.06.002
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