Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0168-583X(01)01255-1
Title: Sub-micron channeling contrast microscopy on reactive ion etched deep Si microstructures
Authors: Teo, E.J. 
Alkaisi, M.
Bettiol, A.A. 
Osipowicz, T. 
Van Kan, J. 
Watt, F. 
Markwitz, A.
Keywords: Channeling contrast microscopy
Composition
Crystal quality
Reactive ion etched
Topography
Issue Date: May-2002
Citation: Teo, E.J., Alkaisi, M., Bettiol, A.A., Osipowicz, T., Van Kan, J., Watt, F., Markwitz, A. (2002-05). Sub-micron channeling contrast microscopy on reactive ion etched deep Si microstructures. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 190 (1-4) : 339-344. ScholarBank@NUS Repository. https://doi.org/10.1016/S0168-583X(01)01255-1
Abstract: High aspect ratio microstructures with compositional inhomogeneity have always been a challenge for broad beam analysis due to the shadowing effect. In the present work, characterization of reactive ion etched (RIE) Si microstructures is carried out using channeling contrast microscopy with a sub-micron beam spot size. An annular detector is used to minimize surface topography effects. The etch damage introduced by the RIE process on Si is determined from channeling measurements. It is found that crystallinity is preserved in the etched trenches, indicating that little damage was inflicted to the crystal lattice by the RIE process. In the axial channeling position, the Si background signal from the substrate is reduced and sensitivity to the light elements detection is increased. This allows quantitative analysis of the composition in the masked regions and etched trenches. The channeled spectrum in the masked regions reveals the presence of a siliconoxyfluoride layer. No F is observed in the etched trenches. © 2002 Elsevier Science B.V. All rights reserved.
Source Title: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
URI: http://scholarbank.nus.edu.sg/handle/10635/77492
ISSN: 0168583X
DOI: 10.1016/S0168-583X(01)01255-1
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