High spatial resolution strain measurement of deep sub-micron semiconductor devices using CBED

Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/77450

Title:	High spatial resolution strain measurement of deep sub-micron semiconductor devices using CBED
Authors:	Toh, S.L. Li, K. Ang, C.H. Er, E. Redkar, S. Loh, K.P. Boothroyd, C.B. Chan, L.
Issue Date:	2004
Citation:	Toh, S.L.,Li, K.,Ang, C.H.,Er, E.,Redkar, S.,Loh, K.P.,Boothroyd, C.B.,Chan, L. (2004). High spatial resolution strain measurement of deep sub-micron semiconductor devices using CBED. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : 143-146. ScholarBank@NUS Repository.
Abstract:	Mechanical stress due to trench isolation and contact etch-stop-layers (ESLs) has been reported to show a marked influence on the electron and hole mobility of nanoscaled MOSFETs. Conventional tools such as micro-Raman spectroscopy and X-ray diffraction for measuring strain are limited in resolution. By using convergent beam electron diffraction (CBED) with nanometer spatial resolution, we have evaluated the mechanical stress induced in deep sub-micron devices by different etch-stop-layers (ESLs) and have demonstrated that the stress along the channel region can be engineered through the implementation of different ESLs. © 2004 IEEE.
Source Title:	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
URI:	http://scholarbank.nus.edu.sg/handle/10635/77450
Appears in Collections:	Staff Publications

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