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|Title:||Tuning the dirac point in CVD-grown graphene through solution processed n-type doping with 2-(2-methoxyphenyl)-1,3-dimethyl-2,3-dihydro-1 H-benzoimidazole|
|Keywords:||CVD grown graphene|
|Citation:||Wei, P., Liu, N., Lee, H.R., Adijanto, E., Ci, L., Naab, B.D., Zhong, J.Q., Park, J., Chen, W., Cui, Y., Bao, Z. (2013-05-08). Tuning the dirac point in CVD-grown graphene through solution processed n-type doping with 2-(2-methoxyphenyl)-1,3-dimethyl-2,3-dihydro-1 H-benzoimidazole. Nano Letters 13 (5) : 1890-1897. ScholarBank@NUS Repository. https://doi.org/10.1021/nl303410g|
|Abstract:||Controlling the Dirac point of graphene is essential for complementary circuits. Here, we describe the use of 2-(2-methoxyphenyl)-1,3-dimethyl-2,3- dihydro-1H-benzoimidazole (o-MeO-DMBI) as a strong n-type dopant for chemical-vapor-deposition (CVD) grown graphene. The Dirac point of graphene can be tuned significantly by spin-coating o-MeO-DMBI solutions on the graphene sheets at different concentrations. The transport of graphene can be changed from p-type to ambipolar and finally n-type. The electron transfer between o-MeO-DMBI and graphene was additionally confirmed by Raman imaging and photoemission spectroscopy (PES) measurements. Finally, we fabricated a complementary inverter via inkjet printing patterning of o-MeO-DMBI solutions on graphene to demonstrate the potential of o-MeO-DMBI n-type doping on graphene for future applications in electrical devices. © 2013 American Chemical Society.|
|Source Title:||Nano Letters|
|Appears in Collections:||Staff Publications|
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