Please use this identifier to cite or link to this item: https://doi.org/10.1021/nl303410g
Title: Tuning the dirac point in CVD-grown graphene through solution processed n-type doping with 2-(2-methoxyphenyl)-1,3-dimethyl-2,3-dihydro-1 H-benzoimidazole
Authors: Wei, P.
Liu, N.
Lee, H.R.
Adijanto, E.
Ci, L.
Naab, B.D.
Zhong, J.Q.
Park, J.
Chen, W. 
Cui, Y.
Bao, Z.
Keywords: CVD grown graphene
Dirac point
inkjet-printing
n-type doping
solution-process
transistor
Issue Date: 8-May-2013
Source: Wei, P., Liu, N., Lee, H.R., Adijanto, E., Ci, L., Naab, B.D., Zhong, J.Q., Park, J., Chen, W., Cui, Y., Bao, Z. (2013-05-08). Tuning the dirac point in CVD-grown graphene through solution processed n-type doping with 2-(2-methoxyphenyl)-1,3-dimethyl-2,3-dihydro-1 H-benzoimidazole. Nano Letters 13 (5) : 1890-1897. ScholarBank@NUS Repository. https://doi.org/10.1021/nl303410g
Abstract: Controlling the Dirac point of graphene is essential for complementary circuits. Here, we describe the use of 2-(2-methoxyphenyl)-1,3-dimethyl-2,3- dihydro-1H-benzoimidazole (o-MeO-DMBI) as a strong n-type dopant for chemical-vapor-deposition (CVD) grown graphene. The Dirac point of graphene can be tuned significantly by spin-coating o-MeO-DMBI solutions on the graphene sheets at different concentrations. The transport of graphene can be changed from p-type to ambipolar and finally n-type. The electron transfer between o-MeO-DMBI and graphene was additionally confirmed by Raman imaging and photoemission spectroscopy (PES) measurements. Finally, we fabricated a complementary inverter via inkjet printing patterning of o-MeO-DMBI solutions on graphene to demonstrate the potential of o-MeO-DMBI n-type doping on graphene for future applications in electrical devices. © 2013 American Chemical Society.
Source Title: Nano Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/77321
ISSN: 15306984
DOI: 10.1021/nl303410g
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