Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0039-6028(00)01064-5
Title: The evolution of 3 × 3, 6 × 6, √3 × √3R30° and 6√3 × 6√3R30° superstructures on 6H-SiC (0 0 0 1) surfaces studied by reflection high energy electron diffraction
Authors: Xie, X.N. 
Wang, H.Q. 
Wee, A.T.S. 
Loh, K.P. 
Keywords: Auger electron spectroscopy
Graphite
Low energy electron diffraction (LEED)
Reflection high-energy electron diffraction (RHEED)
Semiconducting surfaces
Silicon carbide
Surface relaxation and reconstruction
Surface structure, morphology, roughness, and topography
Issue Date: 1-May-2001
Citation: Xie, X.N., Wang, H.Q., Wee, A.T.S., Loh, K.P. (2001-05-01). The evolution of 3 × 3, 6 × 6, √3 × √3R30° and 6√3 × 6√3R30° superstructures on 6H-SiC (0 0 0 1) surfaces studied by reflection high energy electron diffraction. Surface Science 478 (1-2) : 57-71. ScholarBank@NUS Repository. https://doi.org/10.1016/S0039-6028(00)01064-5
Abstract: The technique of reflection high energy electron diffraction (RHEED) has been applied to study the evolution of various superstructures on 6H-SiC (0 0 0 1) as a function of annealing temperature. Between the evolution of the stable 3 × 3 and √3 × √3R30° phases on a silicon-enriched 6H-SiC (0 0 0 1), a mixed phase 3 × 3/2 × 2 reconstruction followed by a well-defined 6 × 6 reconstruction was observed by RHEED for the first time. The 6 × 6 reconstruction is distinct from the pseudo-periodic 6 × 6 structure suggested previously for graphite moire pattern on 6H-SiC (0 0 0 1) [Surf. Sci. 48 (1975) 463; Surf. Sci. 256 (1991) 354]. The mechanisms for the formation of these superstructures in the sequence of 3 × 3, 6 × 6, √3 × √3R30° and 6√3 × 6√3R30° between 800°C to 1200°C were discussed. The 6 × 6 structure is proposed to evolve directly from the 3 × 3 following the missing of consecutive Si clusters in the twisted silicon adlayer model. Annealing the 6 × 6 reconstructed surface to 1000°C gives rise to a √3 × √3R30° reconstruction. From here, the segregation of carbon domains occurs readily and these form an incommensurate 6√3 × 6√3R30 epilayer at 1200°C. At the early stages of the annealing, the 6√3 × 6√3R30 RHEED pattern consists of a series of cluster satellite streaks superimposed on 1 × 1 SiC. Further annealing results in the appearance of graphite streaks with its basis vectors rotated 30° to SiC. Prolonged annealing of the graphitized surface results in the growth of single crystalline graphite multilayers on the 6H-SiC substrate. © 2001 Published by Elsevier Science B.V.
Source Title: Surface Science
URI: http://scholarbank.nus.edu.sg/handle/10635/77237
ISSN: 00396028
DOI: 10.1016/S0039-6028(00)01064-5
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