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Title: Systematic studies of the epitaxial growth of single-crystal ZnO nanorods on GaN using hydrothermal synthesis
Authors: Le, H.Q.
Chua, S.J.
Koh, Y.W.
Loh, K.P. 
Fitzgerald, E.A.
Keywords: A1. Crystal morphology
A2. Growth from solutions
B1. Oxides
B2. Semiconducting materials
Issue Date: 15-Jul-2006
Citation: Le, H.Q., Chua, S.J., Koh, Y.W., Loh, K.P., Fitzgerald, E.A. (2006-07-15). Systematic studies of the epitaxial growth of single-crystal ZnO nanorods on GaN using hydrothermal synthesis. Journal of Crystal Growth 293 (1) : 36-42. ScholarBank@NUS Repository.
Abstract: Single-crystalline ZnO nanorod arrays with diameters of 60-120 nm and lengths of 2 μm have been grown epitaxially on GaN (0 0 1) by hydrothermal synthesis at 100 °C. The ZnO nanorods exhibit true epitaxial growth, in contrast to most of the previously reported methods, which involved the nucleation on a ZnO buffer layer pre-deposited on the substrate. An unprecedented high degree of c-axis orientation is achieved in this hydrothermal epitaxial growth. The effect of growth conditions on the deposition of ZnO nanorods was systematically studied. We showed that by changing the molar ratio of the reactants, we can control the growth morphology of the ZnO nanorod arrays. The optimal conditions to produce high-density single-crystalline ZnO nanorods with c-axis orientation have been identified. The mechanism affecting ZnO nanorod epitaxial nucleation and growth on GaN is discussed. The ZnO nanorods exhibited ultraviolet photoluminescence (PL) at 388 nm and the PL shows a decay lifetime of 58 ps. © 2006 Elsevier B.V. All rights reserved.
Source Title: Journal of Crystal Growth
ISSN: 00220248
DOI: 10.1016/j.jcrysgro.2006.04.082
Appears in Collections:Staff Publications

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