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|Title:||Structure of Co deposited 6H-SiC(0 0 0 1)|
|Authors:||Chen, W. |
|Citation:||Chen, W., Xu, H., Loh, K.P., Wee, A.T.S. (2005-12-05). Structure of Co deposited 6H-SiC(0 0 0 1). Surface Science 595 (1-3) : 107-114. ScholarBank@NUS Repository. https://doi.org/10.1016/j.susc.2005.08.005|
|Abstract:||Clean 6H-SiC(0 0 0 1)-(3 × 3) surfaces were deposited with 0.25-3.5 Å Co at room temperature and subsequently annealed to 950 °C. The structure, chemistry and morphology of Co deposited SiC surfaces were investigated using low energy electron diffraction, X-ray photoelectron spectroscopy, scanning tunneling microscopy, and atomic force microscopy. A Co-induced (6 × 6) superstructure is observed by LEED after annealing 0.25 Å Co deposited SiC surface at 700 °C for 5 min. At higher coverage, CoSi(1 × 1) domains rotated 30° with respect to the underlying SiC substrate are formed after annealing 3.5 Å Co deposited SiC surface at 300 °C for 5 min. The LEED patterns as a function of Co coverage and annealing temperature are also reported. © 2005 Elsevier B.V. All rights reserved.|
|Source Title:||Surface Science|
|Appears in Collections:||Staff Publications|
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