Please use this identifier to cite or link to this item: https://doi.org/10.1021/nn9008615
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dc.titleStructural and electronic properties of PTCDA thin films on epitaxial graphene
dc.contributor.authorHuang, H.
dc.contributor.authorChen, S.
dc.contributor.authorGao, X.
dc.contributor.authorChen, W.
dc.contributor.authorWee, A.T.S.
dc.date.accessioned2014-06-23T05:50:24Z
dc.date.available2014-06-23T05:50:24Z
dc.date.issued2009-11-24
dc.identifier.citationHuang, H., Chen, S., Gao, X., Chen, W., Wee, A.T.S. (2009-11-24). Structural and electronic properties of PTCDA thin films on epitaxial graphene. ACS Nano 3 (11) : 3431-3436. ScholarBank@NUS Repository. https://doi.org/10.1021/nn9008615
dc.identifier.issn19360851
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/77059
dc.description.abstractIn situ low-temperature scanning tunneling microscopy is used to study the growth of 3,4,9,10- perylene tetracarboxylic dianhydride (PTCDA) on epitaxial graphene (EG) on 6H-SiC(0001), as well as on HOPG for comparison. PTCDA adopts a layer-by-layer growth mode, with its molecular plane lying flat on both surfaces. The PTCDA films grow continuously over the EG step edges, but not on HOPG. STS performed on single-layer PTCDA on monolayer EG shows a wide band gap larger than 3.3 eV, consistent with pristine PTCDA films. Synchrotron- based high-resolution photoemission spectroscopy reveals weak charge transfer between PTCDA and EG. This suggests weak electronic coupling between PTCDA and the underlying EG layer. © 2009 American Chemical Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1021/nn9008615
dc.sourceScopus
dc.subjectEpitaxial graphene
dc.subjectPhotoemission spectroscopy
dc.subjectPTCDA
dc.subjectScanning tunneling microscopy
dc.subjectSilicon carbide
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.contributor.departmentCHEMISTRY
dc.contributor.departmentNUS NANOSCIENCE & NANOTECH INITIATIVE
dc.description.doi10.1021/nn9008615
dc.description.sourcetitleACS Nano
dc.description.volume3
dc.description.issue11
dc.description.page3431-3436
dc.identifier.isiut000271951200014
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