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|Title:||Structural and electronic properties of PTCDA thin films on epitaxial graphene|
|Authors:||Huang, H. |
Scanning tunneling microscopy
|Citation:||Huang, H., Chen, S., Gao, X., Chen, W., Wee, A.T.S. (2009-11-24). Structural and electronic properties of PTCDA thin films on epitaxial graphene. ACS Nano 3 (11) : 3431-3436. ScholarBank@NUS Repository. https://doi.org/10.1021/nn9008615|
|Abstract:||In situ low-temperature scanning tunneling microscopy is used to study the growth of 3,4,9,10- perylene tetracarboxylic dianhydride (PTCDA) on epitaxial graphene (EG) on 6H-SiC(0001), as well as on HOPG for comparison. PTCDA adopts a layer-by-layer growth mode, with its molecular plane lying flat on both surfaces. The PTCDA films grow continuously over the EG step edges, but not on HOPG. STS performed on single-layer PTCDA on monolayer EG shows a wide band gap larger than 3.3 eV, consistent with pristine PTCDA films. Synchrotron- based high-resolution photoemission spectroscopy reveals weak charge transfer between PTCDA and EG. This suggests weak electronic coupling between PTCDA and the underlying EG layer. © 2009 American Chemical Society.|
|Source Title:||ACS Nano|
|Appears in Collections:||Staff Publications|
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