Please use this identifier to cite or link to this item: https://doi.org/10.1021/nn9008615
Title: Structural and electronic properties of PTCDA thin films on epitaxial graphene
Authors: Huang, H. 
Chen, S. 
Gao, X. 
Chen, W. 
Wee, A.T.S. 
Keywords: Epitaxial graphene
Photoemission spectroscopy
PTCDA
Scanning tunneling microscopy
Silicon carbide
Issue Date: 24-Nov-2009
Citation: Huang, H., Chen, S., Gao, X., Chen, W., Wee, A.T.S. (2009-11-24). Structural and electronic properties of PTCDA thin films on epitaxial graphene. ACS Nano 3 (11) : 3431-3436. ScholarBank@NUS Repository. https://doi.org/10.1021/nn9008615
Abstract: In situ low-temperature scanning tunneling microscopy is used to study the growth of 3,4,9,10- perylene tetracarboxylic dianhydride (PTCDA) on epitaxial graphene (EG) on 6H-SiC(0001), as well as on HOPG for comparison. PTCDA adopts a layer-by-layer growth mode, with its molecular plane lying flat on both surfaces. The PTCDA films grow continuously over the EG step edges, but not on HOPG. STS performed on single-layer PTCDA on monolayer EG shows a wide band gap larger than 3.3 eV, consistent with pristine PTCDA films. Synchrotron- based high-resolution photoemission spectroscopy reveals weak charge transfer between PTCDA and EG. This suggests weak electronic coupling between PTCDA and the underlying EG layer. © 2009 American Chemical Society.
Source Title: ACS Nano
URI: http://scholarbank.nus.edu.sg/handle/10635/77059
ISSN: 19360851
DOI: 10.1021/nn9008615
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

128
checked on Jun 22, 2018

WEB OF SCIENCETM
Citations

123
checked on May 15, 2018

Page view(s)

38
checked on Jun 1, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.