Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4815998
DC FieldValue
dc.titleRoom temperature positive magnetoresistance via charge trapping in polyaniline-iron oxide nanoparticle composites
dc.contributor.authorLin, A.L.
dc.contributor.authorWu, T.
dc.contributor.authorChen, W.
dc.contributor.authorWee, A.T.S.
dc.date.accessioned2014-06-23T05:48:30Z
dc.date.available2014-06-23T05:48:30Z
dc.date.issued2013-07-15
dc.identifier.citationLin, A.L., Wu, T., Chen, W., Wee, A.T.S. (2013-07-15). Room temperature positive magnetoresistance via charge trapping in polyaniline-iron oxide nanoparticle composites. Applied Physics Letters 103 (3) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4815998
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/76901
dc.description.abstractWe demonstrate a polyaniline-iron oxide nanoparticle (PANI-NP) organic hybrid composite device with room temperature positive magnetoresistance of 85.7%. Temperature dependent resistivity measurements attribute this observation to the decrease in localization length of the charge carriers in the presence of an external magnetic field which result in them being trapped within the device between the insulating PANI layer, hence allowing the device to maintain its resistive state even when the power is switched off, thus exhibiting a memory effect. © 2013 AIP Publishing LLC.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.4815998
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentCHEMISTRY
dc.contributor.departmentPHYSICS
dc.description.doi10.1063/1.4815998
dc.description.sourcetitleApplied Physics Letters
dc.description.volume103
dc.description.issue3
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000322146300060
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.