Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3589970
Title: Room temperature ferromagnetism in partially hydrogenated epitaxial graphene
Authors: Xie, L.
Wang, X.
Lu, J.
Ni, Z.
Luo, Z.
Mao, H. 
Wang, R.
Wang, Y.
Huang, H. 
Qi, D. 
Liu, R. 
Yu, T.
Shen, Z.
Wu, T.
Peng, H.
Özyilmaz, B. 
Loh, K. 
Wee, A.T.S. 
Ariando 
Chen, W. 
Issue Date: 9-May-2011
Citation: Xie, L., Wang, X., Lu, J., Ni, Z., Luo, Z., Mao, H., Wang, R., Wang, Y., Huang, H., Qi, D., Liu, R., Yu, T., Shen, Z., Wu, T., Peng, H., Özyilmaz, B., Loh, K., Wee, A.T.S., Ariando, Chen, W. (2011-05-09). Room temperature ferromagnetism in partially hydrogenated epitaxial graphene. Applied Physics Letters 98 (19) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3589970
Abstract: We report room temperature ferromagnetism in partially hydrogenated epitaxial graphene grown on 4HSiC (0001). The presence of ferromagnetism was confirmed by superconducting quantum interference devices measurements. Synchrotron-based near-edge x-ray absorption fine structure and high resolution electron energy loss spectroscopy measurements have been used to investigate the hydrogenation mechanism on the epitaxial graphene and the origin of room temperature ferromagnetism. The partial hydrogenation induces the formation of unpaired electrons in graphene, which together with the remnant delocalized π bonding network, can explain the observed ferromagnetism in partially hydrogenated epitaxial graphene. © 2011 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/76900
ISSN: 00036951
DOI: 10.1063/1.3589970
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