Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1536959
Title: Precursor states of atomic hydrogen on the Si(100)-(2×1) surface
Authors: Tok, E.S. 
Engstrom, J.R.
Kang, H.C. 
Issue Date: 15-Feb-2003
Source: Tok, E.S., Engstrom, J.R., Kang, H.C. (2003-02-15). Precursor states of atomic hydrogen on the Si(100)-(2×1) surface. Journal of Chemical Physics 118 (7) : 3294-3299. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1536959
Abstract: The precursor states of atomic hydrogen on the Si(100)-(2×1) surface were discussed. It was found that 'hot' hydrogen atoms of energies up to approximately 1.3-1.9 eV was trapped on the surface. The analysis suggested that the existence of precursor states provides an understanding of the non-Langmuirian atomic hydrogen adsorption probability.
Source Title: Journal of Chemical Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/76795
ISSN: 00219606
DOI: 10.1063/1.1536959
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