Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2799241
Title: Possible efficient p-type doping of AlN using Be: An ab initio study
Authors: Wu, R.Q. 
Shen, L. 
Yang, M. 
Sha, Z.D.
Cai, Y.Q. 
Feng, Y.P. 
Huang, Z.G.
Wu, Q.Y.
Issue Date: 2007
Citation: Wu, R.Q., Shen, L., Yang, M., Sha, Z.D., Cai, Y.Q., Feng, Y.P., Huang, Z.G., Wu, Q.Y. (2007). Possible efficient p-type doping of AlN using Be: An ab initio study. Applied Physics Letters 91 (15) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2799241
Abstract: Spin density functional theory based ab initio study is carried out to investigate the feasibility of fabricating p -type AlN using Be as an efficient dopant. It is found that substitutional BeAl is an acceptor with an activation energy of 0.34 eV. To overcome the low solubility of direct incorporation of Be into AlN and self-compensation from Be interstitials, we propose a hydrogen-assisted growth scheme which improves the solubility and suppresses interstitials. Oxygen is also found to be an effective codopant to activate Be in AlN. Our results suggest the possibility of improving p -type conductivity of AlN by Be doping. © 2007 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/76791
ISSN: 00036951
DOI: 10.1063/1.2799241
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