Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1828601
Title: Nanocantilevers made of bent silicon carbide nanowire-in-silicon oxide nanocones
Authors: Lin, M.
Loh, K.P. 
Boothroyd, C.
Du, A.
Issue Date: 29-Nov-2004
Citation: Lin, M., Loh, K.P., Boothroyd, C., Du, A. (2004-11-29). Nanocantilevers made of bent silicon carbide nanowire-in-silicon oxide nanocones. Applied Physics Letters 85 (22) : 5388-5390. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1828601
Abstract: We report the plasma-assisted synthesis of nanocones on a nickel-coated silicon substrate using tetramethyl silane as the gas precursor. These nanocones consist of coaxially aligned, crystalline β-SiC nanowires surrounded by conical-shaped, amorphous silicon oxide precipitates. The propensity of the SiC wire to undergo changes in the growth axis directs the bending of the nanocones, giving rise to structures resembling nanocantilevers. The growth mechanism that controls the nanostructure formation is discussed. © 2004 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/76612
ISSN: 00036951
DOI: 10.1063/1.1828601
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