Please use this identifier to cite or link to this item: https://doi.org/10.1039/b927452a
Title: Growth dynamics and kinetics of monolayer and multilayer graphene on a 6H-SiC(0001) substrate
Authors: Poon, S.W. 
Chen, W. 
Wee, A.T.S. 
Tok, E.S. 
Issue Date: 7-Nov-2010
Source: Poon, S.W., Chen, W., Wee, A.T.S., Tok, E.S. (2010-11-07). Growth dynamics and kinetics of monolayer and multilayer graphene on a 6H-SiC(0001) substrate. Physical Chemistry Chemical Physics 12 (41) : 13522-13533. ScholarBank@NUS Repository. https://doi.org/10.1039/b927452a
Abstract: Using Scanning Tunnelling Microscopy (STM), the transformation from the commonly known carbon-rich (6√3×6√3)R30° reconstructed surface to graphene on the 6H-SiC(0001) substrate is systematically investigated with the aid of adsorbing cobalt (Co) which acts as a tracer to map the evolution of these surfaces. The formation of graphene is observed to begin from the step-edges as Si desorption occurs and the growth process continues akin to that of a step flow growth mode. Analysis of the surface step-height evolution at various stages of graphitization shows that as the initial (6√3×6√3)R30° surface converts to form graphene, three Si-C bilayers beneath collapse to regenerate a C-rich structure which also has a (6√3×6√3)R30° periodicity at the interface between graphene and the SiC bulk. Based on these observations, a structural mechanism for the growth of mono- and multilayer graphene is proposed. In addition, we also examine the rate at which the initial (6√3×6√3)R30° surface coverts to graphene as a function of time and temperature. Kinetic analysis of the growth process reveals that the transformation occurs with an activation energy of 3.0 ± 0.4 eV, a value close to the breaking of a Si-C bond. © 2010 the Owner Societies.
Source Title: Physical Chemistry Chemical Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/76266
ISSN: 14639076
DOI: 10.1039/b927452a
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