Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.diamond.2003.11.044
Title: Ferromagnetic dot encapsulated Boron Nitride nano-structured arrays
Authors: Zhang, H. 
Loh, K.P. 
Chen, W. 
Tan, C.K. 
Koh, Y.W.
Sow, C.H. 
Lim, C.W.
Keywords: Boron Nitride
Lithography
Nanodots
Issue Date: Apr-2004
Citation: Zhang, H., Loh, K.P., Chen, W., Tan, C.K., Koh, Y.W., Sow, C.H., Lim, C.W. (2004-04). Ferromagnetic dot encapsulated Boron Nitride nano-structured arrays. Diamond and Related Materials 13 (4-8) : 1116-1119. ScholarBank@NUS Repository. https://doi.org/10.1016/j.diamond.2003.11.044
Abstract: We have fabricated nickel-encapsulated hexagonal Boron Nitride (h-BN) nanodots on silicon (100). This was achieved by performing plasma-assisted chemical vapor deposition of h-BN on nickel nanodot array prepared by nanosphere lithography. The BN overcoat prevented the contraction of the nickel dot at high temperature and the nickel dot array retained its ferromagnetic properties. The presence of patterned nickel on the silicon substrate promoted the epitaxial growth of h-BN on silicon (100) with the basal plane oriented parallel to the silicon (100) surface. © 2003 Elsevier B.V. All rights reserved.
Source Title: Diamond and Related Materials
URI: http://scholarbank.nus.edu.sg/handle/10635/76175
ISSN: 09259635
DOI: 10.1016/j.diamond.2003.11.044
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