Please use this identifier to cite or link to this item:
|Title:||Ferromagnetic dot encapsulated Boron Nitride nano-structured arrays|
|Authors:||Zhang, H. |
|Source:||Zhang, H., Loh, K.P., Chen, W., Tan, C.K., Koh, Y.W., Sow, C.H., Lim, C.W. (2004-04). Ferromagnetic dot encapsulated Boron Nitride nano-structured arrays. Diamond and Related Materials 13 (4-8) : 1116-1119. ScholarBank@NUS Repository. https://doi.org/10.1016/j.diamond.2003.11.044|
|Abstract:||We have fabricated nickel-encapsulated hexagonal Boron Nitride (h-BN) nanodots on silicon (100). This was achieved by performing plasma-assisted chemical vapor deposition of h-BN on nickel nanodot array prepared by nanosphere lithography. The BN overcoat prevented the contraction of the nickel dot at high temperature and the nickel dot array retained its ferromagnetic properties. The presence of patterned nickel on the silicon substrate promoted the epitaxial growth of h-BN on silicon (100) with the basal plane oriented parallel to the silicon (100) surface. © 2003 Elsevier B.V. All rights reserved.|
|Source Title:||Diamond and Related Materials|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 14, 2018
WEB OF SCIENCETM
checked on Jan 17, 2018
checked on Feb 18, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.