Please use this identifier to cite or link to this item:
|Title:||Fabrication of nano-crystalline silicon thin film on flexible substrate by cathodic vacuum arc|
|Citation:||Lin, T.-Y.,Liao, Z.-J.,Tsai, J.,Chua, D.,Peng, J.-L.,Liu, C.-L.,Mo, C.-N. (2009). Fabrication of nano-crystalline silicon thin film on flexible substrate by cathodic vacuum arc. 2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009 : -. ScholarBank@NUS Repository.|
|Abstract:||Nano-crystalline silicon has been fabricated by cathodic vacuum arc system from single crystalline silicon source. The silicon thin films were deposited at cryogenic temperature hence it is possible to deposit such films on plastic flexible substrates. Both p and n type silicon thin films can be deposited in situ without additional impurity doping process. Therefore, fabrication of thin film type p-n junction diode was achieved. This semiconductor device has potential application in thin film transistor and photovoltaic cells due to its highly crystalline properties (40∼70%). It has long-term stability after prolong solar illumination and higher electron mobility than amorphous silicon. Low temperature deposited nano-crystalline silicon thin film has attracted much attention due to applicable on low-cost substrate, like glass and flexible plastic substrate.|
|Source Title:||2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Sep 29, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.