Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/74713
Title: Phosphorus implant for S/D extension formation: Diffusion and activation study after spacer and spike anneal
Authors: Yeong, S.H.
Colombeau, B.
Benistant, F.
Srinivasan, M.P. 
Mulcahy, C.P.A.
Lee, P.S.
Chan, L.
Keywords: Ge-pai
Halo implant
Phosphorus
Spacer anneal
SPER
Spike anneal
Issue Date: 2006
Source: Yeong, S.H.,Colombeau, B.,Benistant, F.,Srinivasan, M.P.,Mulcahy, C.P.A.,Lee, P.S.,Chan, L. (2006). Phosphorus implant for S/D extension formation: Diffusion and activation study after spacer and spike anneal. AIP Conference Proceedings 866 : 58-61. ScholarBank@NUS Repository.
Abstract: Formation of highly activated S/D extension is one of the key issues to meet the requirements for further downscaling of CMOS devices. Germanium-preamorphization implant (Ge-PAI) followed by solid phase epitaxial regrowth (SPER) is capable of forming abrupt and shallow junctions with activation levels well above solid solubility. In this paper, we demonstrate a possible alternative by using phosphorus (P) with the Ge-PAI and boron (B) Halo implant to form the S/D extension of NMOS. The anomalous diffusion and activation of P after the conventional spacer and spike anneals were studied. We observed that a highly activated and shallow junction can be formed via Ge-PAI after spacer anneal which is equivalent to a low temperature SPER. The level of P activation is enhanced even more when B Halo is considered. It is postulated that this is due to the competing interactions of B and P with the emitted interstitials of the end-of-range (EOR) defects. However, improvement in junction depth and electrical properties due to B halo implant decreases when annealing temperature increases. © 2006 American Institute of Physics.
Source Title: AIP Conference Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/74713
ISBN: 0735403651
ISSN: 0094243X
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