Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.2727421
Title: Defect engineering for ultrashallow junctions using surfaces
Authors: Seebauer, E.G.
Yeong, S.H.
Srinivasan, M.P. 
Kwok, C.T.M.
Vaidyanathan, R.
Colombeau, B.
Chan, L.
Issue Date: 2007
Source: Seebauer, E.G.,Yeong, S.H.,Srinivasan, M.P.,Kwok, C.T.M.,Vaidyanathan, R.,Colombeau, B.,Chan, L. (2007). Defect engineering for ultrashallow junctions using surfaces. ECS Transactions 6 (1) : 365-371. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2727421
Abstract: The behavior of point defects within silicon can be changed significantly by controlling the chemical state at the surface. In ultrashallow junction applications for integrated circuits, such effects can be exploited to reduce transient enhanced diffusion and increase dopant activation. The present work demonstrates such effects experimentally for arsenic and boron. © The Electrochemical Society.
Source Title: ECS Transactions
URI: http://scholarbank.nus.edu.sg/handle/10635/74536
ISBN: 9781566775502
ISSN: 19385862
DOI: 10.1149/1.2727421
Appears in Collections:Staff Publications

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