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|Title:||Defect engineering for ultrashallow junctions using surfaces|
|Source:||Seebauer, E.G.,Kwok, C.T.M.,Vaidyanathan, R.,Kondratenko, Y.V.,Yeong, S.H.,Srinivasan, M.P.,Colombeau, B.,Chan, L. (2008). Defect engineering for ultrashallow junctions using surfaces. ECS Transactions 13 (1) : 55-62. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2911485|
|Abstract:||The behavior of point defects within silicon can be changed significantly by controlling the chemical state at the surface. In ultrashallow junction applications for integrated circuits, such effects can be exploited to reduce transient enhanced diffusion and increase dopant activation. The present work demonstrates such effects experimentally for arsenic and boron. © The Electrochemical Society.|
|Source Title:||ECS Transactions|
|Appears in Collections:||Staff Publications|
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