Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.2911485
Title: Defect engineering for ultrashallow junctions using surfaces
Authors: Seebauer, E.G.
Kwok, C.T.M.
Vaidyanathan, R.
Kondratenko, Y.V.
Yeong, S.H.
Srinivasan, M.P. 
Colombeau, B.
Chan, L.
Issue Date: 2008
Source: Seebauer, E.G.,Kwok, C.T.M.,Vaidyanathan, R.,Kondratenko, Y.V.,Yeong, S.H.,Srinivasan, M.P.,Colombeau, B.,Chan, L. (2008). Defect engineering for ultrashallow junctions using surfaces. ECS Transactions 13 (1) : 55-62. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2911485
Abstract: The behavior of point defects within silicon can be changed significantly by controlling the chemical state at the surface. In ultrashallow junction applications for integrated circuits, such effects can be exploited to reduce transient enhanced diffusion and increase dopant activation. The present work demonstrates such effects experimentally for arsenic and boron. © The Electrochemical Society.
Source Title: ECS Transactions
URI: http://scholarbank.nus.edu.sg/handle/10635/74535
ISBN: 9781566776264
ISSN: 19385862
DOI: 10.1149/1.2911485
Appears in Collections:Staff Publications

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