Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/74487
Title: Analytical damage tables for crystalline silicon
Authors: Chan, H.Y.
Benistant, F.
Srinivasan, M.P. 
Erlebach, A.
Zechner, C.
Issue Date: Jan-2004
Source: Chan, H.Y.,Benistant, F.,Srinivasan, M.P.,Erlebach, A.,Zechner, C. (2004-01). Analytical damage tables for crystalline silicon. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 22 (1) : 463-467. ScholarBank@NUS Repository.
Abstract: Tables for damage profiles created in single-crystal silicon after ion implantation were investigated. The twist and tilt dependency of crystalline silicon were also taken into account. An analytical model based on the SCALP technique was also proposed which was applicable for both impurity and damage profiles for an energy range from 100 eV to 1 MeV. The as-implanted impurity and damage profiles were obtained using the MC collision code CRYSTAL-TRIM. The angle of incident beam and orientation of the wafer affected damage profiles, just like impurity profiles.
Source Title: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
URI: http://scholarbank.nus.edu.sg/handle/10635/74487
ISSN: 10711023
Appears in Collections:Staff Publications

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