Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.commatsci.2004.02.036
Title: Vapor pressure assisted crack growth at interfaces under mixed mode loading
Authors: Chong, C.W.
Guo, T.F. 
Cheng, L. 
Keywords: Cell model
Finite element analysis
Interface toughness
Popcorn failure
Void growth
Issue Date: Aug-2004
Source: Chong, C.W., Guo, T.F., Cheng, L. (2004-08). Vapor pressure assisted crack growth at interfaces under mixed mode loading. Computational Materials Science 30 (3-4 SPEC. ISS.) : 425-432. ScholarBank@NUS Repository. https://doi.org/10.1016/j.commatsci.2004.02.036
Abstract: Moisture diffuses into the numerous pores and cavities formed in polymeric molding compounds, at the filler particle-polymer matrix interfaces and at polymer-silicon interfaces of IC packages. During reflow soldering, the rapidly expanding moisture generates high internal pressures within the voids which are comparable to yield strengths of the molding compounds at glass transition temperatures. The combined action of thermal stresses and high vapor pressure accelerates void growth, and ultimately leads to interface delamination and package cracking. In this study, the molding compound is taken to be an elastic-plastic material while the silicon substrate is treated as an elastic material. The extended Gurson model which incorporates vapor pressure as an internal variable is used to characterize the void growth and coalescence process at the interface. When the mode II loading is dominant, high vapor pressure can cause several-fold reduction in the interface fracture toughness. © 2004 Elsevier B.V. All rights reserved.
Source Title: Computational Materials Science
URI: http://scholarbank.nus.edu.sg/handle/10635/74000
ISSN: 09270256
DOI: 10.1016/j.commatsci.2004.02.036
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