Please use this identifier to cite or link to this item:
Title: SU8 adhesive bonding using contact imprinting
Authors: Yu, L. 
Iliescu, C.
Tay, F.E.H. 
Chen, B.
Keywords: Adhesive bonding
Contact imprinting
SU-8 photoresist
Wafer-to-wafer bonding
Issue Date: 2007
Source: Yu, L.,Iliescu, C.,Tay, F.E.H.,Chen, B. (2007). SU8 adhesive bonding using contact imprinting. Proceedings of the International Semiconductor Conference, CAS 1 : 189-192. ScholarBank@NUS Repository.
Abstract: The present work proposes an adhesive bonding technique, at wafer level, using SU-8 negative photoresist as intermediate layer. The adhesive was selective imprint on one of the bonding surface. The main applications are in microfluidic area where a low temperature bonding is required. The method consists of three major steps. First the adhesive layer is deposited on one of the bonding surface by contact imprinting from a dummy wafer where the SU-8 photoresist was initially spun, or from a Teflon cylinder. Second, the wafers to be bonded are placed in contact and aligned. In the last step, the bonding process is performed at temperatures between 100°C and 200°C, a pressure of 1000 N in vacuum on a classical wafer bonding system. The results indicate a low stress value induced by the bonding technique. In the same time the process presents a high yield: 95-100%. The technique was successfully tested in the fabrication process of a dielectrophoretic device. © 2006 IEEE.
Source Title: Proceedings of the International Semiconductor Conference, CAS
ISBN: 1424401097
DOI: 10.1109/SMICND.2006.283965
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.


checked on Dec 13, 2017

Page view(s)

checked on Dec 16, 2017

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.