Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/73794
Title: Quantifying adhesion strength for Cu/Ta barriers/FTEOS dielectric using modified edge lift off test
Authors: Ho, C.S.
Yong, C.
Zhang, B.C.
Lim, C.Y.H. 
Issue Date: 2004
Source: Ho, C.S.,Yong, C.,Zhang, B.C.,Lim, C.Y.H. (2004). Quantifying adhesion strength for Cu/Ta barriers/FTEOS dielectric using modified edge lift off test. Advanced Metallization Conference (AMC) : 657-662. ScholarBank@NUS Repository.
Abstract: Quantification of the adhesion strength of backend interconnect diffusion barrier films deposited onto FTEOS dielectric was conducted by a method known as modified edge lift off test (MELT). The objective is to investigate the adhesion strength differences between Ta and TaN single layer as well as Ta/TaN bilayer films. The FTEOS/barrier interface was found to be the weakest among all the different barriers tested. The presence of different films on top of the diffusion barriers (Cu/TaN/FTEOS versus SiN/TaN/FTEOS) was found to affect the adhesion strength to the FTEOS interface. © 2005 Materials Research Society.
Source Title: Advanced Metallization Conference (AMC)
URI: http://scholarbank.nus.edu.sg/handle/10635/73794
ISSN: 15401766
Appears in Collections:Staff Publications

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