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|Title:||Quantifying adhesion strength for Cu/Ta barriers/FTEOS dielectric using modified edge lift off test|
|Source:||Ho, C.S.,Yong, C.,Zhang, B.C.,Lim, C.Y.H. (2004). Quantifying adhesion strength for Cu/Ta barriers/FTEOS dielectric using modified edge lift off test. Advanced Metallization Conference (AMC) : 657-662. ScholarBank@NUS Repository.|
|Abstract:||Quantification of the adhesion strength of backend interconnect diffusion barrier films deposited onto FTEOS dielectric was conducted by a method known as modified edge lift off test (MELT). The objective is to investigate the adhesion strength differences between Ta and TaN single layer as well as Ta/TaN bilayer films. The FTEOS/barrier interface was found to be the weakest among all the different barriers tested. The presence of different films on top of the diffusion barriers (Cu/TaN/FTEOS versus SiN/TaN/FTEOS) was found to affect the adhesion strength to the FTEOS interface. © 2005 Materials Research Society.|
|Source Title:||Advanced Metallization Conference (AMC)|
|Appears in Collections:||Staff Publications|
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