Please use this identifier to cite or link to this item: https://doi.org/10.1117/12.474520
Title: MEF studies for attenuated phase shift mask for sub 0.13 um technology using 248 nm
Authors: Tan, S.K.
Lin, Q.
Chua, G.S.
Quan, C. 
Tay, C.J. 
Keywords: 0.10 um
248 nm
Assist features
MEF
Phase-shift mask
Issue Date: 2002
Source: Tan, S.K., Lin, Q., Chua, G.S., Quan, C., Tay, C.J. (2002). MEF studies for attenuated phase shift mask for sub 0.13 um technology using 248 nm. Proceedings of SPIE - The International Society for Optical Engineering 4691 II : 1366-1372. ScholarBank@NUS Repository. https://doi.org/10.1117/12.474520
Abstract: Mask error factor (MEF) plays an important role as lithography progresses to sub wavelength patterning. For patterning feature in the sub wavelength region of the illuminating system, namely 0.10 um line and space feature, resolution enhancement techniques (RET) such as optical proximity correction (OPC), and assist features (AF) are applied. A study on the impact of MEF on 248 nm lithography will be investigated. Experimental results for both isolated line and dense lines up to 0.10 um with AF will be obtained and analyzed. A through pitch experimental study shows a decrement in MEF from dense line to semi-isolated line. Experimental studies on varying the placements of the assist features for both isolated will be conducted. Furthermore, the study also included the comparison by conventional and annular illumination for both line and space. Simulation results will also be utilised as a comparison.
Source Title: Proceedings of SPIE - The International Society for Optical Engineering
URI: http://scholarbank.nus.edu.sg/handle/10635/73599
ISSN: 0277786X
DOI: 10.1117/12.474520
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