Please use this identifier to cite or link to this item: https://doi.org/10.1117/12.711629
Title: A comparative study for mask defect tolerance on phase and transmission for dry and immersion 193-nm lithography
Authors: Ling, M.L.
Chua, G.S.
Tay, C.J. 
Quan, C. 
Lin, Q.
Keywords: Haze related defect
Immersion lithography
Mask transmission change
Phase angle change
Simulation
Issue Date: 2007
Source: Ling, M.L., Chua, G.S., Tay, C.J., Quan, C., Lin, Q. (2007). A comparative study for mask defect tolerance on phase and transmission for dry and immersion 193-nm lithography. Proceedings of SPIE - The International Society for Optical Engineering 6520 (PART 3) : -. ScholarBank@NUS Repository. https://doi.org/10.1117/12.711629
Abstract: 193nm immersion lithography has successfully enabled numerical aperture (NA) greater than 1.0 which allows rooms for improvement in resolution as well as depth of focus. In this study, critical dimension (CD) and depth of focus (DOF) performance for the 45nm technology node for dry and immersion lithography is compared using commercial available simulation tool. The study is based on one dimensional line and space pattern with pitch vary from 150 to 500nm. The effects of mask transmission and phase angle change on CD through pitch performance and DOF are also presented in this paper. Increase in mask transmission will result in increase of CD through pitch and reduction of DOF. When phase angle for the phase shift mask is less than 180 degree, CD through pitch and DOF drop. Finally, mask defects caused by haze on several locations which include MoSi lines, line edges, and space between line ends are simulated. The influence of these defects on CD and the potential line end bridging problem is presented.
Source Title: Proceedings of SPIE - The International Society for Optical Engineering
URI: http://scholarbank.nus.edu.sg/handle/10635/73010
ISBN: 0819466395
ISSN: 0277786X
DOI: 10.1117/12.711629
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