Please use this identifier to cite or link to this item: https://doi.org/10.1117/12.405373
Title: Spreading resistance profiling of ultrashallow junction NPN BJT, with carrier redistribution effect
Authors: Tan, L.C.P.
Tan, L.S. 
Leong, M.S. 
Keywords: BJT
Carrier redistribution effect
Dopant profile
Metallurgical junctions
On-bevel junctions
Spreading resistance profiling
Ultrashallow junctions
Issue Date: 2000
Source: Tan, L.C.P., Tan, L.S., Leong, M.S. (2000). Spreading resistance profiling of ultrashallow junction NPN BJT, with carrier redistribution effect. Proceedings of SPIE - The International Society for Optical Engineering 4227 : 79-89. ScholarBank@NUS Repository. https://doi.org/10.1117/12.405373
Abstract: The spreading resistance profiling technique, when applied to ultrashallow junctions, requires the solution of the Poisson's equation in order to correctly account for the carrier redistribution effect. Whereas it is a straightforward procedure to calculate the spreading resistance profile if the dopant profile is given, it is mathematically complex and tedious to recover the dopant profile for an ultrashallow junction profile. The difficulty lies in recovering the correct type of donor or acceptor species and the metallurgical junctions in the right location. It is known that the carrier redistribution effect displaces the on-bevel junctions away from the metallurgical junctions. To put right this difficulty, the FORWARD and SRTOD algorithms are briefly explained in this paper and the results of FORWARD and SRTOD for an NPN BJT are shown. The improved SRTOD algorithm can correctly the dopant profile of the double ultrashallow metallurgical junctions from the spreading resistance profile, taking into account the carrier redistribution effect.
Source Title: Proceedings of SPIE - The International Society for Optical Engineering
URI: http://scholarbank.nus.edu.sg/handle/10635/72938
ISSN: 0277786X
DOI: 10.1117/12.405373
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