Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/72871
Title: Process variation during tunnel window formation and its impact on the reliability performance of FLOTOX EEPROM devices
Authors: Lai, K.-K.
Lim, P.-S.
Chim, W.-K. 
Pan, Y.
Issue Date: 2000
Source: Lai, K.-K.,Lim, P.-S.,Chim, W.-K.,Pan, Y. (2000). Process variation during tunnel window formation and its impact on the reliability performance of FLOTOX EEPROM devices. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE : 196-199. ScholarBank@NUS Repository.
Abstract: Process variation in the buffered oxide etch (BOE) duration during tunnel window formation can cause floating-gate tunnel-oxide (FLOTOX) electrically erasable and programmable read-only memory (EEPROM) devices to exhibit enhanced window closure effect during write/erase endurance test. Electrical and physical characterisation of devices with insufficient BOE duration indicated the presence of a poor quality or "crabby" oxide region (exhibiting enhanced electron trapping) remaining after tunnel window formation before tunnel oxide growth. © 2000 IEEE.
Source Title: IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
URI: http://scholarbank.nus.edu.sg/handle/10635/72871
ISBN: 0780364309
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