Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/72795
Title: New SOI structure for LIGBT with improved thermal and latch-up characteristics
Authors: Liang, Yung C. 
Xu, Shuming
Ren, Changhong
Luo, Junyang
Issue Date: 1999
Source: Liang, Yung C.,Xu, Shuming,Ren, Changhong,Luo, Junyang (1999). New SOI structure for LIGBT with improved thermal and latch-up characteristics. Proceedings of the International Conference on Power Electronics and Drive Systems 1 : 258-261. ScholarBank@NUS Repository.
Abstract: To improve SOI LIGBT thermal and latch-up properties, a new metal sinker structure is proposed in this paper. The modified structure has a metal sinker connecting the cathode to the substrate. The metal sinker can divert heat from the top of the devices to the substrate, and it can also collect part of the hole current to the substrate. The simulation results show that under the same operating condition the temperature of new structure is much lower than that of the conventional structure. As a consequence the latch-up capability in the new structure is improved. Fabrication work on the metal sinker is currently underway.
Source Title: Proceedings of the International Conference on Power Electronics and Drive Systems
URI: http://scholarbank.nus.edu.sg/handle/10635/72795
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