Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/72794
Title: New RF LDMOS structure with improved power added efficiency for 2 GHz power amplifiers
Authors: Ren, Changhong
Liang, Yung C. 
Xu, Shuming
Issue Date: 2000
Source: Ren, Changhong,Liang, Yung C.,Xu, Shuming (2000). New RF LDMOS structure with improved power added efficiency for 2 GHz power amplifiers. IEEE Region 10 Annual International Conference, Proceedings/TENCON 3 : III-29. ScholarBank@NUS Repository.
Abstract: For 2 GHz cellular applications, it is important to raise the power-added efficiency of the RF power amplifier. A lower output capacitance of the transistor is of vital factor to obtain such a higher efficiency. In order to improve the LDMOS output properties, a new partial SOI structure is proposed in this paper. For the new structure, we achieved a 57% reduction of the output capacitance and a 37% output power increase. Also, the oxide layer under the drain can divert some electric field, therefore for the devices with the same blocking voltage capability, the proposed design needs a thinner Epi layer. This decrease the thickness of P+ sinker region as well as the dimension of the device. These properties prove to be of great advantage in power amplification applications, as it would maximize power added efficiency (PAE) and integrated ability. Laboratory measurement results were obtained to verify the proposed concept.
Source Title: IEEE Region 10 Annual International Conference, Proceedings/TENCON
URI: http://scholarbank.nus.edu.sg/handle/10635/72794
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