Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/72754
Title: Modelling the hot-carrier induced degradation in the subthreshold characteristics of submicrometer LDD PMOSFETs
Authors: Lou, C.L.
Qin, W.H.
Chim, W.K. 
Chan, D.S.H. 
Issue Date: 1997
Source: Lou, C.L.,Qin, W.H.,Chim, W.K.,Chan, D.S.H. (1997). Modelling the hot-carrier induced degradation in the subthreshold characteristics of submicrometer LDD PMOSFETs. Proceedings of the International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA : 127-132. ScholarBank@NUS Repository.
Abstract: Hot-carrier injection is observed to increasingly degrade the subthreshold characteristics with the scaling of LDD PMOSFETs. A physical subthreshold current model is applied to the fresh and hot-carrier stressed submicrometer channel length devices. The generated interface traps and channel length reduction are subsequently extracted. An empirical model is developed to characterize the degradation parameters as a function of stress time and channel length. With the use of this model, we can determine the degradation parameters and hence predict the minimum allowable channel length (for a certain percentage of degradation and lifetime) that is applicable for a specific technology.
Source Title: Proceedings of the International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA
URI: http://scholarbank.nus.edu.sg/handle/10635/72754
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