Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/72737
Title: Mechanisms of intersubband transition in n-type III-V quantum well superlattice and improvement on absorption for TE polarized field
Authors: Cheah, C.W.
Karunasiri, G. 
Tan, L.S. 
Issue Date: 2000
Source: Cheah, C.W.,Karunasiri, G.,Tan, L.S. (2000). Mechanisms of intersubband transition in n-type III-V quantum well superlattice and improvement on absorption for TE polarized field. Materials Research Society Symposium - Proceedings 607 : 223-228. ScholarBank@NUS Repository.
Abstract: In this paper, the theoretical study of intersubband transitions in quantum well infrared photodetectors (QWIPs) applying the eight bands k.p model incorporated with envelope function approximation is described. The focus of the work is on the intersubband transition in n-type III-V QWIP based on AlGaAs/GaAs and AlGaAs/InGaAs material system, with particular emphasis placed on the physics of TE excited transition and the improvement of resulted absorption. Various theoretical absorption spectra of the two material systems are compared, the distinct mechanisms of the intersubband transition for the two material systems are proposed. Possible ways of improving on the absorption for such excitation are also investigated and discussed.
Source Title: Materials Research Society Symposium - Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/72737
ISSN: 02729172
Appears in Collections:Staff Publications

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