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|Title:||Investigation of phonon-assisted photoluminescence in wurtzite GaN epilayer|
|Citation:||Liu, W., Li, M.F., Xu, S.-J., Uchida, K., Matsumoto, K. (1998). Investigation of phonon-assisted photoluminescence in wurtzite GaN epilayer. Proceedings of SPIE - The International Society for Optical Engineering 3419 : 27-34. ScholarBank@NUS Repository. https://doi.org/10.1117/12.311027|
|Abstract:||Photoluminescence of wurztite GaN epilayer was measured in the range of 4 K to 300 K. At low temperature, the neutral-donor bound exciton emission dominates the spectra, while with increasing temperature, free exciton emissions grow rapidly and finally become the dominant lines. The exciton linewidth due to exciton-phonon interaction was studied. LO phonon-assisted photoluminescence associated with both the bound exciton and the flee exciton were also observed. The temperature dependence of LO phonon-assisted emissions can be well explained by the phonon-assisted free exciton emission theory established for II-VI compound semiconductors. In particular, the study of 2LO phonon replica can provide information of the temperature dependence of the concentration and recombination lifetime of free excitons in GaN.|
|Source Title:||Proceedings of SPIE - The International Society for Optical Engineering|
|Appears in Collections:||Staff Publications|
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