Please use this identifier to cite or link to this item: https://doi.org/10.1117/12.311027
Title: Investigation of phonon-assisted photoluminescence in wurtzite GaN epilayer
Authors: Liu, W.
Li, M.F. 
Xu, S.-J. 
Uchida, K.
Matsumoto, K.
Keywords: Exciton
Exciton linewidth
Exciton-phonon interaction
GaN
Phonon
Photoluminescence
Issue Date: 1998
Source: Liu, W., Li, M.F., Xu, S.-J., Uchida, K., Matsumoto, K. (1998). Investigation of phonon-assisted photoluminescence in wurtzite GaN epilayer. Proceedings of SPIE - The International Society for Optical Engineering 3419 : 27-34. ScholarBank@NUS Repository. https://doi.org/10.1117/12.311027
Abstract: Photoluminescence of wurztite GaN epilayer was measured in the range of 4 K to 300 K. At low temperature, the neutral-donor bound exciton emission dominates the spectra, while with increasing temperature, free exciton emissions grow rapidly and finally become the dominant lines. The exciton linewidth due to exciton-phonon interaction was studied. LO phonon-assisted photoluminescence associated with both the bound exciton and the flee exciton were also observed. The temperature dependence of LO phonon-assisted emissions can be well explained by the phonon-assisted free exciton emission theory established for II-VI compound semiconductors. In particular, the study of 2LO phonon replica can provide information of the temperature dependence of the concentration and recombination lifetime of free excitons in GaN.
Source Title: Proceedings of SPIE - The International Society for Optical Engineering
URI: http://scholarbank.nus.edu.sg/handle/10635/72711
ISSN: 0277786X
DOI: 10.1117/12.311027
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