Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/72682
Title: Imaging of charging specimens at high beam energies in the SEM
Authors: Wong, W.K. 
Phang, J.C.H. 
Thong, J.T.L. 
Issue Date: 1995
Source: Wong, W.K.,Phang, J.C.H.,Thong, J.T.L. (1995). Imaging of charging specimens at high beam energies in the SEM. Proceedings of the International Symposium on the Physical 7 Failure Analysis of Integrated Circuits, IPFA : 55-59. ScholarBank@NUS Repository.
Abstract: This paper describes a novel method to observe charging specimens at high beam voltages without specimen preparation. It was found that the technique greatly reduces charging artifacts such as raster faults, discharge streaks, astigmatism and defocussing without sacrificing image quality. Images obtained of uncoated specimens are found to be comparable to gold-coated specimens and without exhibiting charging effects.
Source Title: Proceedings of the International Symposium on the Physical 7 Failure Analysis of Integrated Circuits, IPFA
URI: http://scholarbank.nus.edu.sg/handle/10635/72682
Appears in Collections:Staff Publications

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