Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/72677
Title: Hot-carrier induced degradation in the subthreshold characteristics of LDD PMOSFETs
Authors: Lou, C.L.
Chim, W.K. 
Chan, D.S.H. 
Pan, Y. 
Issue Date: 1995
Source: Lou, C.L.,Chim, W.K.,Chan, D.S.H.,Pan, Y. (1995). Hot-carrier induced degradation in the subthreshold characteristics of LDD PMOSFETs. Proceedings of the International Symposium on the Physical 7 Failure Analysis of Integrated Circuits, IPFA : 86-90. ScholarBank@NUS Repository.
Abstract: Hot-carrier injection is shown to degrade the subthreshold operation of LDD PMOSFETs. Hot-carrier injection is observed to increasingly degrade the subthreshold leakage and subthreshold slope as the LDD PMOSFETs are scaled to smaller dimensions. A physical model, based on the channel shortening effect of degraded PMOSFETs, is used to model the degradation characteristics observed. Degradation in the subthreshold characteristics of PMOSFETs is expected to limit the life of PMOSFETs as its channel length is reduced to half-a-micrometer.
Source Title: Proceedings of the International Symposium on the Physical 7 Failure Analysis of Integrated Circuits, IPFA
URI: http://scholarbank.nus.edu.sg/handle/10635/72677
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