Direct-current measurements of interface traps and oxide charges in LDD pMOSFETs with an n-well structure

Abstract

A direct-current current-voltage (DCIV) technique for the measurement of interface traps and oxide charges in LDD pMOSFETs with n-well in p-substrate is demonstrated. The interface trap densities are monitored using the bulk current of the MOS transistor. The DCIV results for pMOSFETs after substrate hot carrier injection and channel hot carrier injection are presented and analyzed. There are two peaks in the DCIV spectrum after channel hot carrier injection, corresponding to hot-carrier-generated interface traps located in the channel region and the lightly-doped drain (LDD) region respectively. The stress-induced oxide charge results in the shifts of two peaks.