Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/72547
Title: Correlation of Electronic and Thermal Properties of Short Channel nMOSFETS
Authors: Palaniappan, M. 
Ng, V. 
Heiderhoff, R.
Phang, J.C.H. 
Fiege, G.B.M.
Balk, L.J.
Issue Date: 1999
Source: Palaniappan, M.,Ng, V.,Heiderhoff, R.,Phang, J.C.H.,Fiege, G.B.M.,Balk, L.J. (1999). Correlation of Electronic and Thermal Properties of Short Channel nMOSFETS. Conference Proceedings from the International Symposium for Testing and Failure Analysis : 465-470. ScholarBank@NUS Repository.
Abstract: Light emission and heat generation of Si devices have become important in understanding physical phenomena in device degradation and breakdown mechanisms. This paper correlates the photon emission with the temperature distribution of a short channel nMOSFET. Investigations have been carried out to localize and characterize the hot spots using a spectroscopic photon emission microscope and a scanning thermal microscope. Frontside investigations have been carried out and are compared and discussed with backside investigations. A method has been developed to register the backside thermal image with the backside illuminated image.
Source Title: Conference Proceedings from the International Symposium for Testing and Failure Analysis
URI: http://scholarbank.nus.edu.sg/handle/10635/72547
Appears in Collections:Staff Publications

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