Please use this identifier to cite or link to this item:
|Title:||Comparison of the optical gain of wurtzite GaN/AlGaN quantum well lasers grown on the (0001)- and (101̄0) oriented substrates|
|Authors:||Chong, T.C. |
|Citation:||Chong, T.C., Yeo, Y.C., Li, M.F. (1998). Comparison of the optical gain of wurtzite GaN/AlGaN quantum well lasers grown on the (0001)- and (101̄0) oriented substrates. Proceedings of SPIE - The International Society for Optical Engineering 3419 : 51-60. ScholarBank@NUS Repository. https://doi.org/10.1117/12.310990|
|Abstract:||We calculate the optical gain of wurtzite (WZ) GaN/AlGaN QWs grown on the (0001) and (101̄0) oriented substrates, taking into account the valence subband structure modification due to the crystal orientation effect and the pseudomorphic strain which is anisotropic in the QW plane. We show that, for the (101̄0) GaN/AlGaN quantum well (QW), the two topmost valence subbands are more widely separated than the HH1 and LH1 subbands in the (0001) GaN/AlGaN QW. The in-plane energy dispersion of the (10̄10) QW also becomes anisotropic, giving rise to a reduced band-edge density-of-states in comparison with the (0001) QW. Moreover, states constituting the topmost valence subband at the Γ point favor TE mode gain. A combination of the reduced band-edge density-of-states and the existence of the preferred symmetry at the valence band maximum contributes to an improvement of the TE optical gain. A comparison of the QWs of both orientations shows that the (101̄0) QW is capable of achieving lower transparency current densities. Therefore, the (101̄0) orientation is promising in improving the threshold performance of WZ GaN-based QW lasers.|
|Source Title:||Proceedings of SPIE - The International Society for Optical Engineering|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on May 4, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.