Please use this identifier to cite or link to this item:
|Title:||Comparison of interface trap generation by Fowler-Nordheim electron injection and hot-hole injection using the DCIV method|
|Source:||Ng, K.H.,Jie, B.B.,He, Y.D.,Chim, W.K.,Li, M.F.,Lo, K.F. (1999). Comparison of interface trap generation by Fowler-Nordheim electron injection and hot-hole injection using the DCIV method. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : 140-144. ScholarBank@NUS Repository.|
|Abstract:||We report on the different behaviours of interface trap generation caused by Fowler-Nordheim (F-N) electron injection and by hot-hole injection using the direct current current-voltage (DCIV) method. The hole-electron ratio of the gate current under hot-hole injection conditions is quantified. The study shows that the efficiency of hole-induced interface trap generation is about 150 times that of electron-induced interface trap generation. Furthermore, interface trap generation by both hole and electron injections obey a power-law relation with injected fluence. The hot-hole injection is observed to have a smaller power exponent than F-N electron injection.|
|Source Title:||Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Dec 9, 2017
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.