Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/72520
Title: Charging identification and compensation in the scanning electron microscope
Authors: Wong, W.K. 
Thong, J.T.L. 
Phang, J.C.H. 
Issue Date: 1997
Source: Wong, W.K.,Thong, J.T.L.,Phang, J.C.H. (1997). Charging identification and compensation in the scanning electron microscope. Proceedings of the International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA : 97-102. ScholarBank@NUS Repository.
Abstract: Common charging artifacts in the Scanning Electron Microscope (SEM) are discussed. A novel method employing front-end control of the SEM beam voltage and scanning to achieve charging compensation was also discussed. Results show that the new technique is effective in reducing highly-negative charging as well as providing a means for the experimental measurement of charging using the electrostatic mirror.
Source Title: Proceedings of the International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA
URI: http://scholarbank.nus.edu.sg/handle/10635/72520
Appears in Collections:Staff Publications

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