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|Title:||1.5 μm buried heterostructure InGaAsP/InP MQW laser with native-oxidized InAlAs current blocking layer|
|Authors:||Jie, Wang Zhi|
Jin, Chua Soo
Liang, Zhu Hong
Han, Wu Rong
|Source:||Jie, Wang Zhi,Jin, Chua Soo,Fan, Zhou,Liang, Zhu Hong,Wei, Wang,Han, Wu Rong (1998). 1.5 μm buried heterostructure InGaAsP/InP MQW laser with native-oxidized InAlAs current blocking layer. Conference Digest - IEEE International Semiconductor Laser Conference : 157-158. ScholarBank@NUS Repository.|
|Abstract:||We first proposed and realized a 1.5 μm buried hetero-structure InGaAsP/InP MQW laser with a native-oxidized InAlAs current block layer (NO-InAlAs-BH). The primary results are Ith = 5.6 mA, slope efficiency η = 0.23 mW/mA and an output linear power surpassing 22.5 mW.|
|Source Title:||Conference Digest - IEEE International Semiconductor Laser Conference|
|Appears in Collections:||Staff Publications|
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