Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/72428
Title: 1.5 μm buried heterostructure InGaAsP/InP MQW laser with native-oxidized InAlAs current blocking layer
Authors: Jie, Wang Zhi
Jin, Chua Soo 
Fan, Zhou
Liang, Zhu Hong
Wei, Wang
Han, Wu Rong
Issue Date: 1998
Source: Jie, Wang Zhi,Jin, Chua Soo,Fan, Zhou,Liang, Zhu Hong,Wei, Wang,Han, Wu Rong (1998). 1.5 μm buried heterostructure InGaAsP/InP MQW laser with native-oxidized InAlAs current blocking layer. Conference Digest - IEEE International Semiconductor Laser Conference : 157-158. ScholarBank@NUS Repository.
Abstract: We first proposed and realized a 1.5 μm buried hetero-structure InGaAsP/InP MQW laser with a native-oxidized InAlAs current block layer (NO-InAlAs-BH). The primary results are Ith = 5.6 mA, slope efficiency η = 0.23 mW/mA and an output linear power surpassing 22.5 mW.
Source Title: Conference Digest - IEEE International Semiconductor Laser Conference
URI: http://scholarbank.nus.edu.sg/handle/10635/72428
ISSN: 08999406
Appears in Collections:Staff Publications

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