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|Title:||1.5 μm buried heterostructure InGaAsP/InP MQW laser with native-oxidized InAlAs current block layer|
|Authors:||Jie, Wang Zhi|
Jin, Chua Soo
Jie, Wang Xiao
Han, Wu Rong
|Source:||Jie, Wang Zhi,Jin, Chua Soo,Fan, Zhou,Jie, Wang Xiao,Wei, Wang,Han, Wu Rong (1998). 1.5 μm buried heterostructure InGaAsP/InP MQW laser with native-oxidized InAlAs current block layer. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS 2 : 116-117. ScholarBank@NUS Repository.|
|Abstract:||We proposed to eliminate the current leakage from p-n reverse-biased-junction BH InGaAsP/InP laser under high temperature operation by utilizing native-oxidized InAlAs current blocking layer. The characteristic temperature of 50 K has been preliminarily achieved.|
|Source Title:||Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS|
|Appears in Collections:||Staff Publications|
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