Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/72427
Title: 1.5 μm buried heterostructure InGaAsP/InP MQW laser with native-oxidized InAlAs current block layer
Authors: Jie, Wang Zhi
Jin, Chua Soo 
Fan, Zhou
Jie, Wang Xiao
Wei, Wang
Han, Wu Rong
Issue Date: 1998
Source: Jie, Wang Zhi,Jin, Chua Soo,Fan, Zhou,Jie, Wang Xiao,Wei, Wang,Han, Wu Rong (1998). 1.5 μm buried heterostructure InGaAsP/InP MQW laser with native-oxidized InAlAs current block layer. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS 2 : 116-117. ScholarBank@NUS Repository.
Abstract: We proposed to eliminate the current leakage from p-n reverse-biased-junction BH InGaAsP/InP laser under high temperature operation by utilizing native-oxidized InAlAs current blocking layer. The characteristic temperature of 50 K has been preliminarily achieved.
Source Title: Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
URI: http://scholarbank.nus.edu.sg/handle/10635/72427
ISSN: 10928081
Appears in Collections:Staff Publications

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