Please use this identifier to cite or link to this item: https://doi.org/10.1109/INEC.2013.6466005
Title: Ultimate performance projection of ballistic III-V ultra-thin-body MOSFET
Authors: Guo, Y.
Lam, K.-T.
Yeo, Y.-C. 
Liang, G. 
Keywords: atomistic simulation
ballistic transport
III-V
ultra-thin-body
Issue Date: 2013
Source: Guo, Y.,Lam, K.-T.,Yeo, Y.-C.,Liang, G. (2013). Ultimate performance projection of ballistic III-V ultra-thin-body MOSFET. Proceedings - Winter Simulation Conference : 226-227. ScholarBank@NUS Repository. https://doi.org/10.1109/INEC.2013.6466005
Abstract: We investigate the device performance of III-V ultra-thin-body field-effect transistors with the consideration of the effects of materials, body thickness and dielectric effect based on the top-of-barrier model. These three major factors predominate the transport performance in double-gate ultra-thin-body MOSFET for the same transport and surface orientation. Firstly, we observe that among these selected III-Vs for n-type FETs, GaSb has the largest ON-state current due to large charge density caused by subband degeneracy at high bias. Moreover, the effect of the number of layer on FET performance is investigated. The current increases as the number of layers increases from 12 layers to 24 layers but degrades as it keep increasing. Lastly, the advantage of increased dielectric constant on ballistic transport is reduced for material having less density of states such as InSb due to its smaller quantum capacitance. © 2013 IEEE.
Source Title: Proceedings - Winter Simulation Conference
URI: http://scholarbank.nus.edu.sg/handle/10635/72114
ISBN: 9781467348416
ISSN: 08917736
DOI: 10.1109/INEC.2013.6466005
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