Please use this identifier to cite or link to this item: https://doi.org/10.1002/pssb.200301420
Title: Tunable spin-injection and magnetoconductance in a novel 2DEG-ferromagnet structure
Authors: Jiang, Y.
Jalil, M.B.A. 
Issue Date: Jan-2003
Citation: Jiang, Y., Jalil, M.B.A. (2003-01). Tunable spin-injection and magnetoconductance in a novel 2DEG-ferromagnet structure. Physica Status Solidi (B) Basic Research 235 (1) : 157-161. ScholarBank@NUS Repository. https://doi.org/10.1002/pssb.200301420
Abstract: In this paper, we calculate the spin-dependent ballistic transport through a two-dimensional electron gas (2DEG) heterostructure sandwiched between two ferromagnetic metal (FM) layers. A strong spin-injection effect is predicted when the magnetization directions of two FM layers are antiparallel. The spin-injection rate can be tuned by both, applied voltage and magnetic field. The device also exhibits a significant magnetoconductance (MC) when the relative magnetization of FM layers is switched, which functions as a spin-valve (SV). Using a GaAs system as a 2DEG material in our calculation, the MC can be tuned by both the applied voltage and the magnetic field, and reaches up to as high as 37.5%. The device's dual spin-valve and spin-injector characteristics open the possibility for spin electronic and sensor applications in semiconductor based systems.
Source Title: Physica Status Solidi (B) Basic Research
URI: http://scholarbank.nus.edu.sg/handle/10635/72092
ISSN: 03701972
DOI: 10.1002/pssb.200301420
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