Please use this identifier to cite or link to this item:
|Title:||Tunable spin-injection and magnetoconductance in a novel 2DEG-ferromagnet structure|
|Citation:||Jiang, Y., Jalil, M.B.A. (2003-01). Tunable spin-injection and magnetoconductance in a novel 2DEG-ferromagnet structure. Physica Status Solidi (B) Basic Research 235 (1) : 157-161. ScholarBank@NUS Repository. https://doi.org/10.1002/pssb.200301420|
|Abstract:||In this paper, we calculate the spin-dependent ballistic transport through a two-dimensional electron gas (2DEG) heterostructure sandwiched between two ferromagnetic metal (FM) layers. A strong spin-injection effect is predicted when the magnetization directions of two FM layers are antiparallel. The spin-injection rate can be tuned by both, applied voltage and magnetic field. The device also exhibits a significant magnetoconductance (MC) when the relative magnetization of FM layers is switched, which functions as a spin-valve (SV). Using a GaAs system as a 2DEG material in our calculation, the MC can be tuned by both the applied voltage and the magnetic field, and reaches up to as high as 37.5%. The device's dual spin-valve and spin-injector characteristics open the possibility for spin electronic and sensor applications in semiconductor based systems.|
|Source Title:||Physica Status Solidi (B) Basic Research|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Oct 19, 2018
WEB OF SCIENCETM
checked on Oct 3, 2018
checked on Oct 13, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.