Please use this identifier to cite or link to this item: https://doi.org/10.1109/ISEMC.2011.6038339
Title: Transmission characteristics of a coaxial through-silicon via (C-TSV) interconnect
Authors: Zhao, W.-S.
Guo, Y.-X. 
Yin, W.-Y.
Issue Date: 2011
Source: Zhao, W.-S.,Guo, Y.-X.,Yin, W.-Y. (2011). Transmission characteristics of a coaxial through-silicon via (C-TSV) interconnect. IEEE International Symposium on Electromagnetic Compatibility : 373-378. ScholarBank@NUS Repository. https://doi.org/10.1109/ISEMC.2011.6038339
Abstract: Transmission characteristics of a coaxial through-silicon via (C-TSV) interconnect are studied according to our proposed lumped-element circuit model in this paper, with some numerical results given for their design as well as optimization. The influences of their geometrical and physical parameters involved on their transmission and reflection parameters are examined and compared in detail, such as substrate conductivity, radius of the inner cylinder and its electrical conductivity, etc. It is expected that C-TSVs are better choices than that of normal TSV interconnects for effectively suppressing electromagnetic coupling among them, with signal transmission quality improved greatly. Finally, based on our own developed algorithm, the electrothermal responses of a C-TSV interconnect injected with a trapezoidal voltage pulse are also studied, with the temperature-dependent parameters treated appropriately. © 2011 IEEE.
Source Title: IEEE International Symposium on Electromagnetic Compatibility
URI: http://scholarbank.nus.edu.sg/handle/10635/72075
ISBN: 9781424447831
ISSN: 10774076
DOI: 10.1109/ISEMC.2011.6038339
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