Please use this identifier to cite or link to this item: https://doi.org/10.1149/05009.0931ecst
Title: Tin-incorporated source/drain and channel materials for field-effect transistors
Authors: Yeo, Y.-C. 
Han, G. 
Gong, X.
Wang, L.
Wang, W.
Yang, Y.
Guo, P.
Liu, B.
Su, S.
Zhang, G.
Xue, C.
Cheng, B.
Issue Date: 2012
Citation: Yeo, Y.-C., Han, G., Gong, X., Wang, L., Wang, W., Yang, Y., Guo, P., Liu, B., Su, S., Zhang, G., Xue, C., Cheng, B. (2012). Tin-incorporated source/drain and channel materials for field-effect transistors. ECS Transactions 50 (9) : 931-936. ScholarBank@NUS Repository. https://doi.org/10.1149/05009.0931ecst
Abstract: We discuss technologies for the incorporation of substitutional Sn in the source/drain regions for strain engineering of SiGe and Ge channel MOSFETs. We also discuss recent work on the realization of GeSn channel p-MOSFETs and n-MOSFETs. © The Electrochemical Society.
Source Title: ECS Transactions
URI: http://scholarbank.nus.edu.sg/handle/10635/72032
ISBN: 9781607683575
ISSN: 19385862
DOI: 10.1149/05009.0931ecst
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

1
checked on Dec 12, 2018

WEB OF SCIENCETM
Citations

1
checked on Dec 12, 2018

Page view(s)

44
checked on Nov 24, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.