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https://doi.org/10.1117/12.888579
Title: | Third order silicon (Si) nitride side-walled grating using silicon-on-insulatir (SOI) | Authors: | Png, C.E. Lim, S.T. Li, E.P. Danner, A.J. |
Keywords: | Free carrier dispersion effect Integrated optics Photonic circuits Silicon photonics Silicon-on-insulator |
Issue Date: | 2011 | Citation: | Png, C.E., Lim, S.T., Li, E.P., Danner, A.J. (2011). Third order silicon (Si) nitride side-walled grating using silicon-on-insulatir (SOI). Proceedings of SPIE - The International Society for Optical Engineering 7986 : -. ScholarBank@NUS Repository. https://doi.org/10.1117/12.888579 | Abstract: | In this work, we demonstrate three-dimensional (3D) simulations of a third order silicon-based grating with full-width-half-maximum (FWKM) reflection bandwidth of 4nm. This is more than 2 orders of magnitude improvement over a conventional side-walled grating structure. The relationship of grating performance over the infra-red wavelength range is also presented. In order to make this device active, we included an active element, to be inserted in the silicon layer by way of a pin layout. The device has a low power consumption of 114nW and its intrinsic device modulation speed is predicted to function at 40.5MHz. | Source Title: | Proceedings of SPIE - The International Society for Optical Engineering | URI: | http://scholarbank.nus.edu.sg/handle/10635/72017 | ISBN: | 9780819485540 | ISSN: | 0277786X | DOI: | 10.1117/12.888579 |
Appears in Collections: | Staff Publications |
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