Please use this identifier to cite or link to this item: https://doi.org/10.1117/12.888579
Title: Third order silicon (Si) nitride side-walled grating using silicon-on-insulatir (SOI)
Authors: Png, C.E.
Lim, S.T.
Li, E.P.
Danner, A.J. 
Keywords: Free carrier dispersion effect
Integrated optics
Photonic circuits
Silicon photonics
Silicon-on-insulator
Issue Date: 2011
Citation: Png, C.E., Lim, S.T., Li, E.P., Danner, A.J. (2011). Third order silicon (Si) nitride side-walled grating using silicon-on-insulatir (SOI). Proceedings of SPIE - The International Society for Optical Engineering 7986 : -. ScholarBank@NUS Repository. https://doi.org/10.1117/12.888579
Abstract: In this work, we demonstrate three-dimensional (3D) simulations of a third order silicon-based grating with full-width-half-maximum (FWKM) reflection bandwidth of 4nm. This is more than 2 orders of magnitude improvement over a conventional side-walled grating structure. The relationship of grating performance over the infra-red wavelength range is also presented. In order to make this device active, we included an active element, to be inserted in the silicon layer by way of a pin layout. The device has a low power consumption of 114nW and its intrinsic device modulation speed is predicted to function at 40.5MHz.
Source Title: Proceedings of SPIE - The International Society for Optical Engineering
URI: http://scholarbank.nus.edu.sg/handle/10635/72017
ISBN: 9780819485540
ISSN: 0277786X
DOI: 10.1117/12.888579
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