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|Title:||Theoretical study of graphene nanoribbon field-effect transistors|
|Authors:||Liang, G. |
Current density, nanowire
|Citation:||Liang, G.,Neophytou, N.,Lundstrom, M.S.,Nikonov, D.E. (2007). Theoretical study of graphene nanoribbon field-effect transistors. 2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings 1 : 127-130. ScholarBank@NUS Repository.|
|Abstract:||Carbon nanoribbons (CNRs) have been recently experimentally and theoretically investigated for different device applications due to their unique electronic properties. In this work, we present a theoretical study of the electronic structure, e.g. bandgap and density of states, of armchair carbon nanoribbons, using both, simple analytical solutions and numerical solutions based on a π-orbital tight-binding approach. Compared to carbon nanotubes (CNTs), the bandgap and the density of states of CNRs are smaller, attributed to the different boundary conditions (rolled-up graphene vs. planar). The device performance of CNR MOSFETs can potentially outperform planar Si MOSFETs, and compete with high performance CNT MOSFETs.|
|Source Title:||2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings|
|Appears in Collections:||Staff Publications|
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