Please use this identifier to cite or link to this item: https://doi.org/10.1109/EDSSC.2012.6482860
Title: Theoretical calculation and efficient simulations of power semiconductor AlGaN/GaN HEMTs
Authors: Huang, H.
Liang, Y.C. 
Samudra, G.S. 
Issue Date: 2012
Citation: Huang, H.,Liang, Y.C.,Samudra, G.S. (2012). Theoretical calculation and efficient simulations of power semiconductor AlGaN/GaN HEMTs. 2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012 : -. ScholarBank@NUS Repository. https://doi.org/10.1109/EDSSC.2012.6482860
Abstract: In this paper, the influences of Al mole fraction and AlGaN layer strain relaxation on the bound polarization charges and the 2DEG concentration are investigated by theoretical calculation. The calculated sheet polarization charge data is used to preset Sentaurus TCAD to simulate the performance characteristics of the GaN HEMT device. The proposed method is proven to be a simple, equally accurate and effective approach in the simulations. For simplicity and time-saving, the theory-based hybrid method can be employed extensively in the simulations of GaN heterostructures power devices. © 2012 IEEE.
Source Title: 2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012
URI: http://scholarbank.nus.edu.sg/handle/10635/72005
ISBN: 9781467356961
DOI: 10.1109/EDSSC.2012.6482860
Appears in Collections:Staff Publications

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