Please use this identifier to cite or link to this item:
|Title:||Theoretical calculation and efficient simulations of power semiconductor AlGaN/GaN HEMTs|
|Citation:||Huang, H.,Liang, Y.C.,Samudra, G.S. (2012). Theoretical calculation and efficient simulations of power semiconductor AlGaN/GaN HEMTs. 2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012 : -. ScholarBank@NUS Repository. https://doi.org/10.1109/EDSSC.2012.6482860|
|Abstract:||In this paper, the influences of Al mole fraction and AlGaN layer strain relaxation on the bound polarization charges and the 2DEG concentration are investigated by theoretical calculation. The calculated sheet polarization charge data is used to preset Sentaurus TCAD to simulate the performance characteristics of the GaN HEMT device. The proposed method is proven to be a simple, equally accurate and effective approach in the simulations. For simplicity and time-saving, the theory-based hybrid method can be employed extensively in the simulations of GaN heterostructures power devices. © 2012 IEEE.|
|Source Title:||2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Oct 14, 2018
checked on Oct 13, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.